SQ3460EV
www.vishay.com
THERMAL RATINGS (T A = 25 °C, unless otherwise noted)
100
I DM Limited
Vishay Siliconix
10
1
0.1
Limited by R D S (on) *
T C = 25 ° C
BVD SS Limited
100 μ s
1 m s
10 m s
100 m s
1 s , 10 s , D C
S ingle Pul s e
0.01
0.01
0.1 1 10 100
V D S - Drain-to- S ource Voltage (V)
* V GS > minimum V GS at which R D S (on) i s s pecified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
N otes:
0.1
t 1
t 2
0.1
0.01
0.05
0.02
Single Pulse
P DM
t 1
t 2
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 110 °C/W
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-2359-Rev. D, 05-Dec-11
5
Document Number: 67037
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
SQ4401DY-T1-GE3 MOSFET P-CH 40V 15.8A 8SOIC
SQ4410EY-T1-GE3 MOSFET N-CH D-S 30V 8SOIC
SQ4470EY-T1-GE3 MOSFET N-CH 60V 16A 8SOIC
SQ4840EY-T1-GE3 MOSFET N-CH D-S 40V 8SOIC
SQ4850EY-T1-GE3 MOSFET N-CH D-S 60V 8SOIC
SQ4936EY-T1-GE3 MOSFET DUAL N-CH 30V 7A 8SOIC
SQ4942EY-T1-GE3 MOSFET DUAL N-CH 40V 8SOIC
SQ7414EN-T1-E3 MOSFET N-CH 60V 5.6A PPAK 1212-8
相关代理商/技术参数
SQ3469EV-T1-GE3 功能描述:MOSFET 20V 8A 5W P-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQ3481EV-T1-GE3 制造商:Vishay Semiconductors 功能描述:
SQ3866A 制造商:SEMICOA 制造商全称:SEMICOA 功能描述:Chip Type 2C3866A Geometry 1007 Polarity NPN
SQ3866AF 制造商:SEMICOA 制造商全称:SEMICOA 功能描述:Chip Type 2C3866A Geometry 1007 Polarity NPN
SQ3960 制造商:SEMICOA 制造商全称:SEMICOA 功能描述:Chip Type 2C3960 Geometry 0003 Polarity NPN
SQ3960F 制造商:SEMICOA 制造商全称:SEMICOA 功能描述:Chip Type 2C3960 Geometry 0003 Polarity NPN
SQ3D02600B2LJA 制造商:Samsung Electro-Mechanics 功能描述:
SQ4 制造商:Ssac 功能描述: